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1. | ¥ý¶i»sµ{¾ã¦X§Þ³N¬ãµo¤uµ{®v_«n¬ì | 65nm SOI development | 5 | ¹q¾÷¡B¹q¤l¡B¹q«H¡Bª«²z¡B§÷®Æ¬ÛÃö¨t©Ò 2¦~¥H¤W¥b¾ÉÅé¬ÛÃö¤u§@¸gÅç¤×¨Î
| ¥x«n¿¤ | |
2. | ¥ý¶i¥ú¸n¼Ò²Õ§Þ³N¬ãµo¤uµ{®v_«n¬ì | ¶}µoAdvance resolution enhancement technology | 5 | ¹q¾÷¡B¹q¤l¡B¹q«H¡Bª«²z¡B§÷®Æ¬ÛÃö¨t©Ò 2¦~¥H¤W¥b¾ÉÅé¬ÛÃö¤u§@¸gÅç¤×¨Î
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3. | ¥ý¶iÂX´²»sµ{¬ãµo¤uµ{®v_«n¬ì | Advance Process Development | 5 | ¹q¾÷¡B¹q¤l¡B¹q«H¡Bª«²z¡B§÷®Æ¬ÛÃö¨t©Ò 2¦~¥H¤W¥b¾ÉÅé¬ÛÃö¤u§@¸gÅç¤×¨Î
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4. | ¤¸¥ó¤uµ{§Þ³N¬ãµo¤uµ{®v_«n¬ì | 1.Device characterization
2.Device data analysis
3.TCAD simulation for device design
4.Device design
5.Advance device development | 3 | ¹q¾÷¡B¹q¤l¡B¹q«H¡Bª«²z¡B§÷®Æ¬ÛÃö¨t©Ò 2¦~¥H¤W¥b¾ÉÅé¬ÛÃö¤u§@¸gÅç¤×¨Î ¼ô±x¤¸¥ó°Ñ¼Æ´ú¶q¡A©Î¼ô±xC¡BBASIC¡BVBµ{¦¡³]p¨Î | ¥x«n¿¤ | |
5. | »sµ{¾ã¦X§Þ³N¬ãµo¤uµ{®v_«n¬ì | 45nm HK/MG development | 4 | ¹q¾÷¡B¹q¤l¡B¹q«H¡Bª«²z¡B§÷®Æ¬ÛÃö¨t©Ò 2¦~¥H¤W¥b¾ÉÅé¬ÛÃö¤u§@¸gÅç¤×¨Î
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6. | ÅÞ¿è»sµ{§Þ³N¬ãµo¤uµ{®v_«n¬ì | 1.(BEOL) reliability analysis, evaluation, research, and development on advanced technology.
2.Front End of Line (FEoL) reliability analysis, evaluation, research, and development on advanced technology | 2 | ¹q¾÷¡B¹q¤l¡B¹q«H¡Bª«²z¡B§÷®Æ¬ÛÃö¨t©Ò 2¦~¥H¤W¥b¾ÉÅé¬ÛÃö¤u§@¸gÅç¤×¨Î
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7. | »sµ{¾ã¦X¤uµ{®v_«n¬ì | 1.»sµ{¾ã¦X¡B§ïµ½»P¤é±`ºûÅ@
2.¨}²vªº´£¤É»P«~½èªº§ïµ½
3.»s³y¬yµ{ªº³Ì¾A¤Æ»P§Þ³N¶}µoªº¬ÛÃö¤u§@
4.WAT¹q©Ê¤ÀªR
5.¨ä¥L | 5 | ¹q¾÷¡B¹q¤l¡B¹q«H¡Bª«²z¡B§÷®Æ¬ÛÃö¨t©Ò 2¦~¥H¤W¥b¾ÉÅé¬ÛÃö¤u§@¸gÅç¤×¨Î
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8. | »sµ{¾ã¦X¤uµ{®v_¦Ë¬ì | 1.»sµ{¾ã¦X¡B§ïµ½»P¤é±`ºûÅ@
2.¨}²vªº´£¤É»P«~½èªº§ïµ½
3.»s³y¬yµ{ªº³Ì¾A¤Æ»P§Þ³N¶}µoªº¬ÛÃö¤u§@
4.WAT¹q©Ê¤ÀªR
5.¨ä¥L | 5 | ¹q¾÷¡B¹q¤l¡B¹q«H¡Bª«²z¡B§÷®Æ¬ÛÃö¨t©Ò 2¦~¥H¤W¥b¾ÉÅé¬ÛÃö¤u§@¸gÅç¤×¨Î
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